2003
Publications
| K. Ueda, K.
Takafuji, H. Hiramatsu, H. Ohta, T. Kamiya, M. Hirano,
and H. Hosono “Electrical and Optical Properties and Electronic Structures of LnCuOS (Ln=La~Nd)” Chem. Mater. 15 (2003) 3692-3695 |
| K. Ueda, S. Inoue,
S. Hirose, H. Kawazoe, and H. Hosono “Wide-gap p-type conductive properties in layered oxychalcogenides” Mat. Res. Soc. Symp. Proc. 747 (2003) V2.1.1-11 |
| K. Ueda, H.
Hosono, H. Hiramatsu, M.Orita, M. Hirano and H. Kawazoe “Wide-gap p-type Cu(I)-containing layered oxychalcogenides” Proc.10th Internatonal Ceramics Congress Part D |
| K. Ueda, K.
Takafuji, and H. Hosono “Preparation and crystal structure analysis of CeCuOS” J. Solid State Chem. 170 (2003) 182-187 |
| H. Hiramatsu, K. Ueda,
H. Ohta, M. Hirano, T. Kamiya, and H. Hosono “Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe” Thin Solid Films 445 (2003) 304-308 |
| H. Hiramatsu, K. Ueda,
K. Takafuji, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono “Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se)semiconductor alloys” J. Appl. Phys. 94 (2003) 5805-5808 |
| H. Hiramatsu, K. Ueda,
H. Ohta, M. Hirano, T. Kamiya and H. Hosono “Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films” Appl. Phys. Lett. 82 (2003) 1048-1050 |
| H. Hiramatsu, K. Ueda,
H. Ohta, M. Hirano, and H. Hosono “Heteroepitaxial growth of a wide gap p-type oxysulfide, LaCuOS” Mat. Res. Soc. Symp. Proc. 747 (2003) V6.9.1-6 |
| K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Hirano, and H. Hosono “Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs” Thin Solid Films 445 (2003) 322-326 |
| K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Mirano, and H. Hosono “Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film” Mat. Res. Soc. Symp. Proc. 747 (2003) V2.6.1-6 |
| K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Hirano and H. Hosono “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor” Science 300 (2003) 1269-1272 |
| H. Ohta, K. Nomura, H.
Hiramatsu, K. Ueda, T. Kamiya, M. Hirano, and H.
Hosono “Frontier of transparent oxide semiconductors” Solid State Elec.47 (2003) 2261-2267 |
| S. Narushima, H.
Mizoguchi, K. Shimizu, K. Ueda, H. Ohta, M. Hirano, T.
Kamiya, and H. Hosono “A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes” Adv. Mater. 15 (2003) 1409-1413 |
| H. Ohta, K. Nomura, H.
Hiramatsu, T. Suzuki, K. Ueda, M. Orita, M. Hirano,
Y. Ikuhara, and H. Hosono “Reactive solid-phase epitaxy” Mat. Res. Soc. Symp. Proc. 747 (2003) V2.5.1-9 |
| H. Ohta, K. Nomura, M.
Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara,
and H. Hosono “Single-Crystalline Films of the Homologous Series InGaO3(ZnO)m Grown by Reactive Solid-Phase Epitaxy” Adv. Func. Mater. 13 (2003) 139-144 |
| H. Ohta, M. Orita, H.
Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M.
Hirano and H. Hosono “Frontier of transparent conductive oxides” Proc.10th Internatonal Ceramics Congress Part D 983-994 |
| S. Narushima, H.
Mizoguchi, H. Ohta, M. Hirano, M. Hirano, K. Shimizu, K.
Ueda, T. Kamiya, and H. Hosono “X-ray amorphous p-type conductive oxide; ZnRh2O4” Mat. Res. Soc. Symp. Proc. 747 (2003) V2.2.1-6 |