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2004

Publications

K. Ueda, H. Hiramatsu, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono
�gSingle-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen)�h
Phys. Rev. B 69 (2004) 155305
K. Ueda, H. Hosono and Noriaki Hamada
�gEnergy band structure of LaCuOCh (Ch=S, Se and Te) calculated by the full-potential linearized augmented plane-wave method�h
J. Phys.: Condens. Matter 16 (2004) 5176-518688
H. Hiramatsu, K. Ueda, T. Kamiya, H. Ohta, M. Hirano and H. Hosono
�gOptical properties of two-dimensional electronic structure in wide-gap layered oxychalcogenide: La2CdO2Se2�h
J. Phys. Chem. B 108 (2004) 17344-17351
T. Kamiya, K. Ueda, H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono
�gTwo-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors LaCuOCh (Ch=S, Se, Te) and La2CdO2Se2�h
Mat. Res. Soc. Symp. Proc. 811 (2004) E4.10.1-687
M. Yasukawa, K. Ueda, and H. Hosono
�gThermoelectric properties of layered oxyselenides La1-xSrxCuOSe�h
J. Appl. Phys. 95 (2004) 3594
H. Hiramatsu, K. Ueda, T. Kamiya, H. Ohta, M. Hirano and H. Hosono
�gSynthesis of single-phase layered oxychalcogenide La2CdO2Se2: crystal structure, optical and electrical properties�h
J. Mater. Chem. 14 (2004) 2946-2950
H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono
�gHeteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy�h
Appl. Phys. A 79 (2004) 1517-1520
H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono
�gDegenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)�h
Appl. Phys. A 79 (2004) 1521-1523
H. Hiramatsu, K. Ueda, K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono
�gFabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln=La-Nd; Ch=S-Te) by reactive solid-phase epitaxy�h
J. Mater. Res. 19 (2004) 2137-214383.
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano and H. Hosono
�gCarrier transport of extended and localized states in InGaO3(ZnO)5�h
Mat. Res. Soc. Symp. Proc. 811 (2004) E2.9.1-6
S. Narushima, M. Hiroki, K. Ueda, K. Shimizu, T. Kamiya, M. Hirano and H. Hosono
�gElectrical properties and local structure of n-type conducting amorphous indium sulphide �h
Phi. Mag. Lett. 84 (2004) 665-671
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara, and H. Hosono
�gGrowth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy�h
J. Appl. Phys. 95 (2004) 5532-5539
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono
�gAll oxide transparent MISFET using high-k dielectrics gates�h
Microelectronic Engineering 72 (2004) 294-298
Y. Toda, S. Matsuishi, K. Hayashi, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono
�gField Emission of Electron Anions Clathrated in Subnanometer-Sized Cages in [Ca24Al28O64]4+(4e-)�h
Adv. Mater. 16 (2004) 685-689
H. Kamioka, H. Hiramatsu, M. Hirano, K. Ueda, T. Kamiya and H. Hosono
�gQuantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenides LaCuOS�h
Opt. Lett. 29 (2004) 1659-1661
T. Kamiya, H. Ohta, M. Kamiya, K. Nomura, K. Ueda, M. Hirano, and H. Hosono
�gLi-doped NiO epitaxial thin film with atomically flat surface�h
J. Mater. Res. 19 (2004) 913-920
H. Ohta, K. Nomura, H. Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M. Hirano, Y. Ikuhara, and H. Hosono
�gHigh-Quality epitaxial film growth of trasparent oxide semiconductors�h
J. Ceram. Soc. Jap. 112[S] (2004) S602-S609
H. Kamioka, H. Hiramatsu, H. Ohta, M. Hirano, K. Ueda, T. Kamiya, and H. Hosono
�gThird-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe
�hAppl. Phys. Lett. 84 (2004) 879-881
H. Hiramatsu, H. Ohta, T. Suzuki, C. Honjo, Y. Ikuhara, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono
�gMechanism for Heteroepitaxial Growth of Transparent P-type Semiconductor: LaCuOS by Reactive Solid-State Epitaxy�h
Cryst. Growth Des. 4 (2004) 301-307
K. Ikeuchi, S. Kuniyoshi, T. Nishimura, M. Yasukawa, T. Kono, K. Ueda and H. Hosono
�gSynthesis of layered perovskites Ban+1SnnO3n+1 by coprecipitation method and their thermoelectric properties �h
J. Jpn. Soc. Powder Powder Metallurgy 51 (2004) 875-880
T. Kamiya, H. Ohta, H. Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K. Ueda, M. Hirano, and H. Hosono
�gNatural nanostructures in ionic semiconductors�h
Microelectronic Engineering 73-74 (2004) 620-626

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Domestic Conferences

K. Furui, Y. Matumaru, K. Ueda, K. Shimooka, S. Kohiki
Phot luminecense of rare earth elements doped Sr‚QCeO4
41th Chemical-related branch Kyushu Convention
July 17, 2004�@Kitakyusyu international conference hall
K. Furui, T. Miyazaki, Y. Matumaru, K. Ueda, K. Shimooka, S. Kohiki
Photoluminescense of rare earth and transition metal elements doped Sr‚QCeO4
2004 CSJ Kyusyu branch convention
Dec. 17, 2004 Kitakyusyu Technocenter

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