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2004
Publications
K. Ueda, H.
Hiramatsu, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono gSingle-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen)h Phys. Rev. B 69 (2004) 155305 |
K. Ueda, H.
Hosono and Noriaki Hamada gEnergy band structure of LaCuOCh (Ch=S, Se and Te) calculated by the full-potential linearized augmented plane-wave methodh J. Phys.: Condens. Matter 16 (2004) 5176-518688 |
H. Hiramatsu, K. Ueda,
T. Kamiya, H. Ohta, M. Hirano and H. Hosono gOptical properties of two-dimensional electronic structure in wide-gap layered oxychalcogenide: La2CdO2Se2h J. Phys. Chem. B 108 (2004) 17344-17351 |
T. Kamiya, K. Ueda,
H. Hiramatsu, H. Ohta, M. Hirano, and H. Hosono gTwo-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors LaCuOCh (Ch=S, Se, Te) and La2CdO2Se2h Mat. Res. Soc. Symp. Proc. 811 (2004) E4.10.1-687 |
M. Yasukawa, K. Ueda,
and H. Hosono gThermoelectric properties of layered oxyselenides La1-xSrxCuOSeh J. Appl. Phys. 95 (2004) 3594 |
H. Hiramatsu, K. Ueda,
T. Kamiya, H. Ohta, M. Hirano and H. Hosono gSynthesis of single-phase layered oxychalcogenide La2CdO2Se2: crystal structure, optical and electrical propertiesh J. Mater. Chem. 14 (2004) 2946-2950 |
H. Hiramatsu, K. Ueda,
K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono gHeteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxyh Appl. Phys. A 79 (2004) 1517-1520 |
H. Hiramatsu, K. Ueda,
K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono gDegenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)h Appl. Phys. A 79 (2004) 1521-1523 |
H. Hiramatsu, K. Ueda,
K. Takafuji, H. Ohta, M. Hirano, T. Kamiya and H. Hosono gFabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln=La-Nd; Ch=S-Te) by reactive solid-phase epitaxyh J. Mater. Res. 19 (2004) 2137-214383. |
K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Hirano and H. Hosono gCarrier transport of extended and localized states in InGaO3(ZnO)5h Mat. Res. Soc. Symp. Proc. 811 (2004) E2.9.1-6 |
S. Narushima, M. Hiroki,
K. Ueda, K. Shimizu, T. Kamiya, M. Hirano and H.
Hosono gElectrical properties and local structure of n-type conducting amorphous indium sulphide h Phi. Mag. Lett. 84 (2004) 665-671 |
K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C.
Honjyo, Y. Ikuhara, and H. Hosono gGrowth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxyh J. Appl. Phys. 95 (2004) 5532-5539 |
K. Nomura, H. Ohta, K.
Ueda, T. Kamiya, M. Hirano, and H. Hosono gAll oxide transparent MISFET using high-k dielectrics gatesh Microelectronic Engineering 72 (2004) 294-298 |
Y. Toda, S. Matsuishi, K.
Hayashi, K. Ueda, T. Kamiya, M. Hirano, and H.
Hosono gField Emission of Electron Anions Clathrated in Subnanometer-Sized Cages in [Ca24Al28O64]4+(4e-)h Adv. Mater. 16 (2004) 685-689 |
H. Kamioka, H. Hiramatsu,
M. Hirano, K. Ueda, T. Kamiya and H. Hosono gQuantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenides LaCuOSh Opt. Lett. 29 (2004) 1659-1661 |
T. Kamiya, H. Ohta, M.
Kamiya, K. Nomura, K. Ueda, M. Hirano, and H.
Hosono gLi-doped NiO epitaxial thin film with atomically flat surfaceh J. Mater. Res. 19 (2004) 913-920 |
H. Ohta, K. Nomura, H.
Hiramatsu, T. Suzuki, K. Ueda, T. Kamiya, M.
Hirano, Y. Ikuhara, and H. Hosono gHigh-Quality epitaxial film growth of trasparent oxide semiconductorsh J. Ceram. Soc. Jap. 112[S] (2004) S602-S609 |
H. Kamioka, H. Hiramatsu,
H. Ohta, M. Hirano, K. Ueda, T. Kamiya, and H.
Hosono gThird-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe hAppl. Phys. Lett. 84 (2004) 879-881 |
H. Hiramatsu, H. Ohta, T.
Suzuki, C. Honjo, Y. Ikuhara, K. Ueda, T. Kamiya,
M. Hirano, and H. Hosono gMechanism for Heteroepitaxial Growth of Transparent P-type Semiconductor: LaCuOS by Reactive Solid-State Epitaxyh Cryst. Growth Des. 4 (2004) 301-307 |
K. Ikeuchi, S. Kuniyoshi,
T. Nishimura, M. Yasukawa, T. Kono, K. Ueda and H.
Hosono gSynthesis of layered perovskites Ban+1SnnO3n+1 by coprecipitation method and their thermoelectric properties h J. Jpn. Soc. Powder Powder Metallurgy 51 (2004) 875-880 |
T. Kamiya, H. Ohta, H.
Hiramatsu, K. Hayashi, K. Nomura, S. Matsuishi, K.
Ueda, M. Hirano, and H. Hosono gNatural nanostructures in ionic semiconductorsh Microelectronic Engineering 73-74 (2004) 620-626 |
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Domestic Conferences
K. Furui, Y. Matumaru, K.
Ueda, K. Shimooka, S. Kohiki Phot luminecense of rare earth elements doped SrQCeO4 41th Chemical-related branch Kyushu Convention July 17, 2004@Kitakyusyu international conference hall |
K. Furui, T. Miyazaki, Y.
Matumaru, K. Ueda, K. Shimooka, S. Kohiki Photoluminescense of rare earth and transition metal elements doped SrQCeO4 2004 CSJ Kyusyu branch convention Dec. 17, 2004 Kitakyusyu Technocenter |
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