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Publications

K. Ueda, and H. Hosono
�gBandgap engineering, band edge emission and p-type conductivity in wide-gap LaCuOS1-xSex oxychalcogenides�h
J. Appl. Phys.91 (2002) 4768-4770
K. Ueda, and H. Hosono
�gCrystal structure of LaCuOS1-xSex oxychalcogenides�h
Thin Solid Films 411 (2002) 115-118
H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono
�gHeteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS�h
Appl. Phys. Lett. 81 (2002) 598-600
S. Hirose, K. Ueda, H. Kawazoe and H. Hosono
�gElectronic Structure of Sr2Cu2ZnO2S2 Layered Oxysulfide with CuS Layers�h
Chem. Mater. 14 (2002) 1037-1041
H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono
�gPreparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique�h
Thin Solid Films 411 (2002) 125-128
H. Mizoguchi, K. Ueda, M. Orita, S-C Moon, K. Kajihara, M. Hirano and H. Hosono
�gDecomposition of water by a CaTiO3 photocatalyst under UV light irradiation�h
Materials Research Bulletin 37 (2002) 2401-2406
M. Miyakawa, K. Ueda, and H. Hosono
�gCarrier generation in highly oriented WO3 films by proton or helium implantation�h
J. Appl. Phys. 92 (2002) 2017-2022
M. Miyakawa, K. Ueda, and H. Hosono
�gCarrier control in transparent semiconducting oxide thin films by ion implantation: MgIn2O4 and ZnO�h
Nuclear Instruments and Methods in Physics Research B 191 (2002) 173-177
H. Yanagi, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono
�gFabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure�h
Solid State Commun. (2002) 15-17121
M. Miyakawa, H. Un�fno, K. Ueda, H. Kawazoe, and H. Hosono
�gCarrier doping into polycrystalline MgIn2O4 thin films by proton implantation�h
Philosophical Magazine B 82 (2002) 1155-1162
K. Nomura, H. Ohta, K. Ueda, M. Orita, M. Hirano and H. Hosono
�gNovel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound�h
Thin Solid Films 411 (2002) 147-151
H. Hiramatsu, M. Orita, M. Hirano, K. Ueda, and H. Hosono
�gElectrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering�h
‚i. Appl. Phys. 91 (2002) 9177-9181
H. Hosono, H. Ohta, M. Orita, K. Ueda, and M. Hirano
�gFrontier of transparent conductive oxide thin films�h
Vacuum 66 (2002) 419-425
M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe, H. Ohta, M. Orita, and H. Hosono
�gCarrier doping into MgIn2O4 epitaxial thin films by proton implantation�h
J. Appl. Phys. 91 (2002) 2112-2117
H. Ohta, M. Orita, M. Hirano, K. Ueda and H. Hosono
�gEpitaxial growth of transparent conductive oxides�h
International J. Modern Phys. B 16 (2002) 173-180
H. Mizoguchi, M. Hirano, S. Fujitsu, T. Takeuchi, K. Ueda, and H. Hosono
�gZnRh2O4: A p-type semiconducting oxide with a valence band composed of a low spin state Rh3+ in a 4d6 configuration�h
Appl. Phys. Lett. 80 (2002) 1207-1209
H. Ohta, M. Orita, M. Hirano, I. Yagi, K. Ueda, and H. Hosono
�gElectronic structure and optical properties of SrCu2O2�h
J. Appl. Phys. 91 (2002) 3074-3078

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